tcst1103/1202/1300/2103/2202/2300 document number 83764 rev. 1.8, 16-aug-06 vishay semiconductors www.vishay.com 1 19180 top view + + e d 7.6 0.3 b) a) e4 transmissive optical sensor with phototransistor output description the tcst1103/1202/1300/2103/2202/2300 are transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the opti- cal axes in a leaded package which blocks visible light. these part numbers include options for aperture width and mounting flanges. features ? package type: leaded ? detector type: phototransistor ? dimensions package a: l 11.9 mm x w 6.3 mm x h 10.8 mm ? dimensions package b: l 24.5 mm x w 6.3 mm x h 10.8 mm ? gap: 3.1 mm ? typical output current under test: i c = 4 ma (tcst1103/2103) ? typical output current under test: i c = 2 ma (tcst1202/2202) ? typical output current under test: i c = 0.5 ma (TCST1300/2300) ? daylight blocking filter ? emitter wavelength 950 nm ? lead (pb)-free soldering released ? lead (pb)-free component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? optical switch ? photo interrupter ? counter ? encoder order instructions absolute maximum ratings t amb = 25 c, unless otherwise specified coupler part number remarks resolution, aperture minimum order quantity tcst1103 without mounting flange a) 0.6 mm, 1 mm 1020 pcs, 85 pcs/tube tcst1202 without mounting flange a) 0.4 mm, 0.5 mm 1020 pcs, 85 pcs/tube TCST1300 without mounting flange a) 0.2 mm, 0.25 mm 1020 pcs, 85 pcs/tube tcst2103 with mounting flange b) 0.6 mm, 1 mm 1020 pcs, 85 pcs/tube tcst2202 with mounting flange b) 0.4 mm, 0.5 mm 1020 pcs, 85 pcs/tube tcst2300 with mounting flange b) 0.2 mm, 0.25 mm 1020 pcs, 85 pcs/tube parameter test condition symbol value unit total power dissipation t amb 25 c p tot 250 mw operating temperature range t amb - 55 to + 85 c storage temperature range t stg - 55 to + 100 c soldering temperature distance to package: 2 mm; t 5 s t sd 260 c
www.vishay.com 2 document number 83764 rev. 1.8, 16-aug-06 tcst1103/1202/1300/2103/2202/2300 vishay semiconductors input (emitter) output (detector) electrical characteristics t amb = 25 c, unless otherwise specified coupler input (emitter) parameter test condition symbol value unit reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 3a power dissipation t amb 25c p v 100 mw junction temperature t j 100 c parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 100 ma collector peak current t p /t = 0.5, t p 10 ms i cm 200 ma power dissipation t amb 25c p v 150 mw junction temperature t j 100 c parameter test condition part symbol min ty p. max unit current transfer ratio v ce = 5 v, i f = 20 ma tcst1103, tcst2103 ctr 10 20 % tcst1202, tcst2202 ctr 5 10 % TCST1300, tcst2300 ctr 1.25 2.5 % collector current v ce = 5 v, i f = 20 ma tcst1103, tcst2103 i c 24 ma tcst1202, tcst2202 i c 12 ma TCST1300, tcst2300 i c 0.25 0.5 ma collector emitter saturation voltage i f = 20 ma, i c = 1 ma tcst1103, tcst2103 v cesat 0.4 v i f = 20 ma, i c = 0.5 ma tcst1202, tcst2202 v cesat 0.4 v i f = 20 ma, i c = 0.1 ma TCST1300, tcst2300 v cesat 0.4 v resolution, path of the shutter crossing the radiant sensitive zone i crel = 10 to 90 % tcst1103, tcst2103 s0.6mm tcst1202, tcst2202 s0.4mm TCST1300, tcst2300 s0.2mm parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
tcst1103/1202/1300/2103/2202/2300 document number 83764 rev. 1.8, 16-aug-06 vishay semiconductors www.vishay.com 3 output (detector) switching characteristics parameter test condition symbol min ty p. max unit collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 10 a v eco 7v collector dark current v ce = 25 v, i f = 0, e = 0 i ceo 100 na parameter test condition symbol min ty p. max unit turn-on time v s = 5 v, i c = 2 ma, r l = 100 (see figure 1) t on 10.0 s turn-off time v s = 5 v, i c = 2 ma, r l = 100 (see figure 1) t off 8.0 s figure 1. test circuit for t on and t off figure 2. switching times channel i channel ii 95 10 8 90 + 5 v i c = 2 ma; adj u sted b y i i f 0 i f r g = 50 t p t p t =0.01 oscilloscope r 1 m l c l 20 pf 50 100 = 50 s f t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c 96 1169 8 t p p u lse d u ration t d delay time t r rise time t on (=t + t ) d r t u rn-on time t s storage time t f fall time t off (= t s +t f )t u rn-off time figure 3. power dissipation li mit vs. ambient temperature 0 0 100 200 300 400 95 110 88 p - po w er dissipation (m w ) t am b - am b ient tem p erat u re ( c ) co u pled de v ice phototransistor ir - diode 150 120 90 60 30
www.vishay.com 4 document number 83764 rev. 1.8, 16-aug-06 tcst1103/1202/1300/2103/2202/2300 vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified figure 4. forward current vs. forward voltage figure 5. relative current transfer ratio vs. ambient temperature figure 6. collector dark current vs. ambient temperature 0.1 1 10 100 1000 0 v f - for w ard v olta g e ( v ) 96 11 8 62 f i - for w ard c u rrent (ma) 1.6 0.2 1.4 1.2 1.0 0. 8 0.6 0.4 2.0 1. 8 - 25 0 0.5 1.0 1.5 2.0 ctr - relati v e c u rrent transfer ratio rel t am b - am b ient temperat u re (c) 95 110 8 9 v ce = 5 v i f = 20 ma 100 75 50 25 0 0 1 10 100 1000 10000 i - collector dark c u rrent (na) ceo t am b - am b ient temperat u re (c) 95 11090 v ce = 25 v i f = 0 100 75 50 25 figure 7. collector current vs. forward current figure 8. collector current vs. collector emitter voltage figure 9. current transfer ratio vs. forward current 0.001 0.01 0.1 1 10 0.1 i f - for w ard c u rrent (ma) 96 12066 v ce = 5 v i - collector c u rrent (ma) c 100 10 1 0.01 0.1 1 10 0.1 v ce - collector emitter v oltage ( v ) 96 12067 i - collector c u rrent (ma) c 20 ma 10 ma 5 ma 2 ma 1 ma i f = 50 ma 100 10 1 0.1 1 10 100 0.1 i f - for w ard c u rrent (ma) 96 1206 8 v ce = 5 v ctr - c u rrent transfer ratio ( % ) 100 10 1
tcst1103/1202/1300/2103/2202/2300 document number 83764 rev. 1.8, 16-aug-06 vishay semiconductors www.vishay.com 5 figure 10. turn on/off time vs. collector current figure 11. relative collecto r current vs. displacement 0 i c - collector c u rrent (ma) 95 110 8 6 t / t - t u rn on / t u rn off time ( s) off on n on sat u rated operation v s = 5 v r l = 100 t on 0 5 10 15 20 t off 10 8 6 4 2 0 10 20 30 40 50 60 70 8 0 90 100 110 - 0.5 s - displacement (mm) 96 12005 i - relati v e collector c u rrent crel 0 s a = 1 mm 0.2 0.3 0.4 0.5 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 figure 12. relative collecto r current vs. displacement figure 13. relative collecto r current vs. displacement 96 12006 0 s a = 0.5 mm 0 10 20 30 40 50 60 70 8 0 90 100 110 - 0.5 s - displacement (mm) i - relati v e collector c u rrent crel 0.3 0.4 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 0.5 96 12007 0 s a = 0.25 mm 0 10 20 30 40 50 60 70 8 0 90 100 110 - 0.5 s - displacement (mm) i - relati v e collector c u rrent crel 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 0.5
www.vishay.com 6 document number 83764 rev. 1.8, 16-aug-06 tcst1103/1202/1300/2103/2202/2300 vishay semiconductors package dimensions in mm 96 12094 96 12095
tcst1103/1202/1300/2103/2202/2300 document number 83764 rev. 1.8, 16-aug-06 vishay semiconductors www.vishay.com 7 tube dimensions 20252
www.vishay.com 8 document number 83764 rev. 1.8, 16-aug-06 tcst1103/1202/1300/2103/2202/2300 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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